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Inelastic Electron Tunneling in Ge-Barrier
並列摘要
Measurements of the inelastic electron tunneling characteristics of metal-amorphous Ge-metal junctions are presented. The phonon peaks in the thin layers Ge have been observed and identified. The agreement between our results and those of Ge Esaki junctions, Schottky junctions and neutron scattering data IS good.
並列關鍵字
無資料被引用紀錄
Chiu, C. C. (2009). 多層內導線連接結構脫層與機械應力導致載子遷移率改變之研究 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0016-1111200916101189
蘇武加（2010）。Ta-Si-C 非晶質擴散阻障應用於
銅製程之特性研究〔碩士論文，國立虎尾科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0028-2008201016381700
延伸閱讀
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- 陳得瑋（2019）。Deformation of a spatial elastica under edge thrust constrained inside a springy tube〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201902495