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Fabrication of Plannar Ge(Li) Detector
並列摘要
A planar Ge(Li) detector of active area 4.5 cm2, drifting depth 4 mm was completed and its fabricating procedure was described in detail. The energy resolution of the detector was measured to be 3.3 keV with the ORTEC 120-3F preamplifier, ORTEC 410 linear amplifier and detector bias of 500 volts. Its characteristic curves of the current-bias and the capacitance-bias were also measured.
並列關鍵字
無資料被引用紀錄
張良瑋（2009）。以高藍光穿透率之UV光固化材料製作靜電可調式複合型微非球面透鏡〔碩士論文，國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2009.00181
延伸閱讀
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- 郭晉譯（2010）。Fabrication of Planer Polymer Waveguide Bragg Reflector Device〔碩士論文，國立虎尾科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0028-0902201009090000
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