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AC Conductivity of a Ge-Se-Tl System
並列摘要
Studies of the AC conductivity of bulk samples of an amorphous Ge14Se66¡xTlx (20≤ X≤28 at %) system, in the frequency range 500 Hz -1.0 MHz and temperature range 100 - 360 K, have been carried out. The AC conductivity 3/4AC(!) is found to be proportional to !^S. The temperature dependence of 3/4AC(!), in the low temperature range (T≤310K), can be reasonably interpreted by the variable range hopping (VRH) mechanism. On the other hand, at T≥310 K, 3/4AC(!) is thermally activated. The AC conductivity measured at room temperature 3/4AC (300 K) is attributed to the increase in the Tl content, which creates charged defect centers inside the studied glassy system. The effect of the Tl content on ¢Eσ is frequency dependent.
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