Steady State and Transient Gain Characteristics of the Stimulated Brillouin Scattered Mode in Quantum Semiconductor Plasmas

S. Ghosh ； Swati Dubey ； R. Vanshpal

《Chinese Journal of Physics》 51卷6期 (2013/12) Pp. 1251-1269

https://doi.org/10.6122/CJP.51.1251

並列摘要

Using the quantum hydrodynamical model, the steady state and transient gain characteristics of the stimulated Brillouin scattered mode in semiconductor plasmas have been studied. The third-order Brillouin susceptibility due to a nonlinear current density and electrostriction of the medium have been determined using the coupled mode theory. The effect of the Bohm potential on the steady state and transient Brillouin gain coefficient was studied through the quantum corrections in the classical hydrodynamic equations. It was found that the Bohm potential in the electron dynamics enhances the steady-state and transient Brillouin gain coefficients. Reduction in the threshold pump intensity of the said process has been realized as a consequence of the inclusion of quantum correction term.

參考文獻

S. Schiemann, W. Ubachs, and W. Hogervorst, IEEE J. Quantum Electron. 33, 358 (1997).

A. Mitra, H. Yoshida, F. Fujita, and M. Nakatsuka, J. Appl. Phys. 45, 1607 (2006).

R. R. Sharma and V. K. Tripathi, Phys. Rev. B 20, 748 (1979).

S. Guha and C. Basu, Phys. Stat. Solidi B 122, 799 (1984).

S. Dubey and S. Ghosh, J. Phys. I. France 7, 1445 (1997).