原子層沉積技術係以前驅物氣體與基板表面所產生的交互反應進行超薄薄膜之成長,其優點為精密的厚度及成分控制與高階梯覆蓋率鍍膜特性。本文介紹原子層沉積技術的原理、發展及基本系統設計製作實務,並討論其於奈米結構之均勻性鍍膜驗證。
The atomic layer deposition (ALD) is carried out by using exchange reaction between precursor gas molecules and substrate. Good step coverage, thickness uniformity in a large area and precise control in thickness and composition make atomic layer deposition become an enabling technology for the semiconductor industry. In this article, principle, development and design concept of ALD system will be given. Applications of ALD on nanostructured coating will be introduced in detail.