A Study of Ti-Zr-V non-evaporable getter films grown on extruded aluminum and extruded stainless steel

鈦釩鋯非蒸發型氣體吸附薄膜成長於擠型鋁合金與擠型不鏽鋼之研究

吳怜慧(Ling-Hui Wu) ； 鄭家沐(Chia-Mu Cheng) ； 薛秦(Chin Shueh) ； 彭賢耀(Shen-Yaw Perng) ； 沈怡青(I-Ching Sheng)

《真空科技》 29卷2期 (2016/06) Pp. 46-51

摘要

我們將鈦釩鋯非蒸發型氣體吸附薄膜成長於擠型鋁材與擠型無縫不銹鋼材上，此兩種基板材料為台灣光子源之真空腔材料。本文研究鈦釩鋯吸附薄膜的性質是否和基板材料有關，包括研究薄膜表面形貌、結晶結構、氣體吸附性質。利用直流濺鍍的方法鍍覆鈦釩鋯非蒸發型氣體吸附薄膜於基板。鍍膜參數如下描述: 功率為250 瓦特，鍍膜氣氛為氬氣，鍍膜時氣壓為0.53 帕，鍍膜速率為0.034 奈米/ 秒。這裡觀察到鈦釩鋯吸附薄膜成長於鋁基板與不銹鋼基板的表面形貌截然不同，因薄膜成長會受到基板原始表面形貌影響。由截面影像可知，鈦釩鋯吸附薄膜為柱狀結構；而成長於兩種基板上薄膜之結晶結構相似。薄膜表面的粗糙度是主要影響氣體吸附量的原因。

關鍵字

鈦釩鋯非蒸發型氣體吸附薄膜 ； 台灣光子源 ； 表面形貌 ； 氣體吸附

並列摘要

Ti-Zr-V non-evaporable getter (NEG) films were grown on extruded aluminum and extruded seamless stainless steel, which are used in the vacuum chambers in Taiwan Photon Source (TPS). It is studied whether the properties of the Ti-Zr-V getter films, including surface morphologies, crystalline structures, and the amount of gas adsorption, are influence by the substrate materials. The Ti-Zr-V NEG films were deposited by using the direct current sputtering method. DC (direct current) power 250 W, pressure 0.53 Pa of sputter gas (Ar), and deposition rate 0.034 nm．S^(-1) were the deposition parameters. The surface morphologies of the Ti-Zr-V getter film on two substrates appear dissimilar as the growth of the films follows the nature of the substrate surface. The cross-sectional structure of a NEG film indicated that the NEG film has a columnar structure. The surface roughness is suggested to play an important role in the amount of gas adsorption.

並列關鍵字

Ti-Zr-V NEG film ； Taiwan Photon Source ； surface morphologies ； gas adsorption