部分解離絕緣體上矽金氧半元件電容特性之二維分析

A 2D Analysis for Capacitance Characteristics of Partially-Depleted SOI NMOS Devices

王善杰(Shan-Jie Wang)

指導教授 ： 郭正邦

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2004年)

https://doi.org/10.6342/NTU.2004.10038

摘要

本論文中提出了考慮電流突增情形發生下的部份解離絕緣體上矽N型金氧半元件的電容模擬分析。
第二章簡單說明部份解離絕緣體上矽N型金氧半元件之電流突增發生的機制，並考慮不同溫度及不同薄膜參雜濃度的情形下，發生電流突增之汲極電壓的變化情形。
第三章中藉由二維元件模擬軟體(MEDICI)，針對不同的閘極偏壓進行CDG、CSG、CGD、CGS對汲極電壓的變化情形進行模擬。就模擬的結果，進行討論並提出可能的機制。

關鍵字

電流突增 ； 電容特性 ； 部分解離絕緣體上矽

並列摘要

This thesis reports a 2D analytical simulation for the capacitance characteristics of partially-depleted (PD) silicon on insulator (SOI) NMOS devices.
In chapter 2, we make a brief description of the mechanism for kink effect of PD SOI NMOS devices and study the triggering VDS with the conditions in different operating temperature and different thin film dopping concentration.
In chapter 3, by using the 2D device simulator(Medici), we make a simulation of CDG,CSG,CGD,CGS versus VDS for different gate voltages. For the simulation results, we discuss and present some physical viewpoints.

並列關鍵字

kink effect ； Capacitance Characteristics ； PD SOI

參考文獻

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