以X射線光電子能譜儀研究生長於銻磷砷化銦上 之原生氧化層特性

Properties of native oxide on InAsPSb studied by X-ray photoelectron spectroscopy

黃芷琳(Chih-Ling Huang)

指導教授 ： 林浩雄

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2015年)

https://doi.org/10.6342/NTU.2015.00599

摘要

本論文的研究主題為以X射線光電子能譜儀(XPS)研究生長於銻磷砷化銦上之原生氧化層特性。利用peak area ratio、VFF model、valence band spectra、氧化物厚度、氧化物組成來分析原生氧化層薄膜特性。
由peak area ratio與氧化物厚度結果發現當氧化物厚度維持定值時，合金中元素成分越多，該元素peak area ratio就越小。由氧化物厚度分析發現到，二元InAs中As氧化物厚度約5 Å，而不同基板(為GaAs與InAs基板)的四元InAsPSb中As等效氧化物厚度約2 Å，顯示合金可有效降低As的氧化物厚度；在GaAs及InAs基板上的合金中，In氧化物厚度均變動不大，而五族氧化物厚度因Sb氧化物厚度上升而明顯增厚，造成四元合金總氧化厚度上升，推測此現象與合金畸變能有關。
最後由valence band spectra與氧化組成分析發現，在GaAs、InAs兩種基板上，畸變能較小的三片樣品其原生氧化層組成均為In rich，而畸變能較大的三片樣品其原生氧化層組成均為group V rich，此現象與Sb氧化物隨畸變能增厚有關。

關鍵字

銻磷砷化銦 ； 原生氧化層 ； XPS ； valence band spectra ； VFF model

並列摘要

In this thesis, we demonstrate the properties of native oxide on InAsPSb studied by X-ray Photoelectron Spectroscopy. We utilize peak area ratio, VFF model, valence band spectra, oxide layer thickness and oxide composition to analyze the native oxide layer.
From peak area ratio and oxide layer thickness results, we find when the oxide layer thickness remains steady, the element’s peak area ratio will decrease as the element composition of the alloy increase. From the oxide layer thickness analysis, the As oxide layer thickness of InAs binary is about 5 Å. Whereas the As oxide layer thickness of InAsPSb alloy with different substrates (including the GaAs and InAs substrates) are about 2 Å, indicating that the alloy can reduce the As oxide layer thickness effectively. For the alloys on the GaAs and InAs substrates, the thickness of In oxide layer changes slightly; however, group V oxide layer thickness increases obviously owing to Sb, which make the total oxide thickness increase. We suggest that the distortion energy may be responsible for the phenomenon.
Finally, analysis from the valence band spectra and oxide composition results, for the GaAs and InAs substrates, alloy with lower distortion energy shows oxide layer with In rich characteristic; on the other hand, alloy with higher distortion energy shows oxide layer rich in group V elements.

並列關鍵字

InAsPSb ； native oxide ； XPS ； valence band spectra ； VFF model

參考文獻

[13] 李劭皇,“銻化鎵與銻磷砷化銦的選擇性蝕刻研究,”臺灣大學電子工程學研究所, 2013.

[29] 陳冠達,“成長在砷化鎵的銻磷砷化銦薄膜晶格結構研究,”臺灣大學電子工程學研究所, 2012.

[23] 劉尚奕,“交流電驅動有機發光二極體及自組裝分子修飾石墨烯場效電積體之特性研究,”臺灣大學光電工程學研究所, 2014.

[3] J. M. Porter, J. B. Jeffries, and R. K. Hanson, “Mid-infrared laser-absorption diagnostic for vapor-phase measeurments in an evaporating n-decane aerosol,” Appl. Phys. B: Lasers Opt., vol. 97, pp. 215, 2009.

[4] Y. Zhang, W. Gao, Z. Song, Y. An, L. Li, Z. Song, W. W. Yu, and Y. Wang, “Design of a novel gas sensor structure based on mid-infrared absorption spectrum,” Sens. Actuators, B, vol. 147, pp. 5, 2010.