We report the surface, magnetic and charge transport in organic spin valve structure (Ferromagnetic/Organic/Ferromagnetic) with self-assembled monolayer barrier. We have built top ferromagnetic electrode by transfer printing and sputtering to prevent interdiffusion or pinhole and observed that the interdiffusion could be suppressed by lowering the fabrication energy of the top ferromagnetic layer. A through study of the device characteristics reveals that the hysteresis on I-V measurement is proposed to contribute from tunneling through junction and charge trapping on the thiol and ferromagnetic interface. Magnetoresistance ratio is 1 % have reported in our system. We have demonstrated how the device can switch between two pair of conducting state for the potential of develop multifunction memory device which combine MRAM and RRAM properties