本論文主要是以超音波噴霧法(ultrasonic spray pyrolysis method)來成長銦鎵共摻雜之氧化鋅(IGZO)薄膜,研究主要分為兩大方向:(1) 探討共同摻雜對薄膜表面形貌及電性的影響;(2) 對共同摻雜薄膜做熱退火處理,改變退火時間與溫度,探討其對導電特性之影響。 由實驗結果證實了薄膜表面結構會受摻雜濃度影響,而我們得到最好電特性是當摻雜比例為5at.%成長溫度在550℃時導電特性為n-type,電阻率為44 、載子移動率為25 ;在可見光區薄膜穿透率為80%。經過660度熱退火20分鐘後我們可以得到最低電阻率為 ,載子遷移率為21.86 ,因此本實驗中以摻雜濃度比例為5 at.%時其薄膜電性最好。
In this thesis, the ultrasonic spray pyrolysis properties was used to fabricate indium-gallium co-doped ZnO thin films to study their optical and electronic .There are two main purposes in our report : (1) explore the effect of In-Ga co-doping on the morphology and physical properties of the films; and (2) studying investigating the post-annealing features in IGZO thin films. The results confirmed that the surface structure of the films will be affected by the doping concentration. The conducting properties reach the best result of when sample grown at 550℃ with doping of 5 at%, resistivity of 44 Ω-cm, and mobility of 25 cm2/Vs. The transmittance is above 80% for the sample in visible light region. After annealing 660℃ for 20 minutes, we get the lowest resistivity of 11.6×10-2 Ω-cm and highest mobility of 21.86cm2/Vs. This result shows that the doping ratio of 5 at.% reveals the best transport properties of In-Ga co-doped ZnO films.