本篇論文討論不同佈局設計和不同製程條件的射頻複晶矽薄膜電晶體(RF TFT)之直流與高頻特性。首先以閘極長度和增加指狀閘極上之接觸窗的結構變化來研究電性參數之關係。為了釐清結構改變後的高頻特性變化,以小訊號模型參數的改變作進一步分析,分析結果可使其高頻特性達到最佳化。接著討論不同製程參數來改善RF TFT的特性,比較不同的退火機制與金屬矽化物來探討其直流和高頻特性,並分析不同製程參數造成小訊號參數的影響,藉此了解高頻特性之差異,且得到RF TFT的製程參數之最佳化。 在直流量測中,主要分析參數為臨界電壓、次臨界斜率、轉導和電子遷移率。高頻量測中,主要分析截止頻率和最大震盪頻率,並針對重要參數作深入探討。藉由此實驗結果,可以提供往後設計RF TFT的參考,給予製程上的設計準則。
We investigated RF TFT DC and high frequency performances with different gate layout design and different process condition in this thesis. First of all, by observing the changes of gate length and gate direct finger contact, we examined the electron parameter relation. After realizing the changing structure of high frequency performance to analyze how different gate structures affected the small signal parameter is necessary and to make high frequency performance optimal. After that we focused on how to improve RF TFT characteristics through different process condition. In a condition of the different anneal methods and silicide in the relation of electron parameter, this research analyzed DC and high frequency performances. By analyzing the influence of small signal parameter affected to different process condition, we observed high frequency characteristics when its process condition changed. During the process, the setting of RF TFT and fabrication process became optimal. In the process of measurement of transfer, the main parameters are threshold voltage, Subthreshold Swing, transconductance, and mobility. High-frequency measurements focused on the analysis of Cutoff frequency and maximum oscillation frequency and discussed important parameters. According to its result, this paper can provide a guideline for RF TFT design and fabrication in the future.
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