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  • 學位論文

鋁摻雜對氧化鋅/聚(3,4-乙烯基二氧噻吩)/聚(苯乙烯磺酸) 光電複合薄膜性質之影響

The Effect of Al Doping on the Optoelectronic Properties of ZnO/PEDOT/PSS Nanocomposite Film

指導教授 : 陳志恆
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摘要


隨科技產業的蓬勃發展,高效率光電材料廣泛使在於可撓性電子設備的需求日益漸增。透明導電薄膜研究發展須兼具透明度、電性需求以及可撓曲等特性。目前常見的銦錫氧化物已為工業應用最廣泛的材料,具低電阻率與可見光高穿透率等特性。然而,自然界銦元素屬於稀有金屬且其化合物有毒性。以及金屬氧化物薄膜易在彎曲時產生缺陷,使應用程度受到限制。本研究利用製程簡單與成本優勢之濕式塗佈成膜技術結合鋁摻雜氧化鋅混合PEDOT/PSS形成透明導電複合薄膜,期望應用於可撓性電子設備元件。 論文分為兩部分,第一部分為利用Pechini法製備氧化鋅與鋁(0.3-4 at.%)摻雜氧化鋅奈米顆粒(AZO)。第二部分為鋁摻雜氧化鋅/PEDOT/PSS透明導電複合薄膜之研究。第一部分之研究成果顯示利用Pechini法製備純氧化鋅以及鋁摻雜氧化鋅時,添加適量的檸檬酸螯合劑與PEG2000交聯劑於500oC熱處理有助於獲得高純度與高結晶且形貌粒徑均勻之奈米氧化鋅顆粒,推測檸檬酸係由只解離一個羧酸螯合住一個Zn2+陽離子產生架橋作用(ZnH2(citrate)),在成核過程中提供保護,藉以穩定系統中鋅陽離子。XPS與EDX證實摻雜的鋁嵌入氧化鋅晶格內。當鋁摻雜濃度於1.7 at.%時可得到不含雜相之最小晶粒(26nm)與最大光學能隙3.14 eV,且擁有最低的電阻率254Ωcm。鋁摻雜可使自由載子濃度升高,而增強導電性質,但鋁摻雜過多則出現離子散射之結果。拉曼觀察E1(LO)氧空缺濃度隨鋁摻雜濃度增加而提高。 第二部分研究顯示,A(1.7at.%)ZO/PEDOT/PSS/PEG300薄膜有最佳電導率6.47 x 10-1 S/cm,薄膜厚度在1μm時,透光率可達75%。拉曼光譜分析發現: ZnO存在使得PEDOT/PSS由原本的醌型與苯型之混合構型轉變為醌型單一結構,有助於提升電導度。比較市售氧化鋅與採用Pechini法製備氧化鋅各別混合於PEDOT/PSS/PEG300之複合薄膜。由FTIR與拉曼分析顯示出:溶膠/凝膠所得顆粒在經熱處理後,表面仍殘留前驅物。依本研究製備之純氧化鋅於PEDOT/PSS/PEG300薄膜中具較有較佳化學相容性,光電特性也優於市售之氧化鋅。

並列摘要


In this study, transparent and conductivity nanocomposite films of Al doped ZnO nanoparticles and PEDOT/PSS in PEG300 were coated on glass substrate by using the spin coating method. The experiment was divided into two parts. First, Un-doped ZnO and Al (0.3–4.0 at.%) doped ZnO nanopowders (AZO) were prepared by the Pechini method, heat treatment at 500oC for 3 h in air, and then analyzed by SEM-EDX、TEM、XRD、Raman spectra、UV-Vis、XPS and Four point probe. The morphology and grain size were found to be controlled by heat treatment temperature and the concentrations of chelating aging, citric acid and crosslinking agents, PEG2000. XRD patterns of AZO powders were similar to those of ZnO powders, indicating that Al ions were substituted with Zn atoms in the ZnO structure. From the XRD data, the grain size of the A(1.7 at.%)ZO nanoparticles revealed a minimum at 23 nm with optical band gap at 3.14 eV. With increasing Al dopant, the AZO nanoparticle increase their defect concentration (oxygen vacancies) resultant from Raman spectra. The electrical sheet resistance of the A(1.7 at.%)ZO reached a minimum of 5.36 x 105 Ω/sq. Second, modification of the electrical properties of PEDOT/PSS by the incorporation into it of ZnO nanoparticles which were synthesized by solution mix containing PEG300. In the nanocomposite, there is a change of chemical structure from a mixture of benzoid and quinoid to a mostly quinoid was observed. This structural changes result in an enhancement of the 2 orders of magnitude in electrical conductivity. The best A(1.7 at.%)ZO/PEDOT/PSS/PEG300 films from Hall work showed the greatest conductivity at 6.47 x10-1 S/cm with the hightest transmittance at 75%. Moreover, the films prepared from two types of commercial product and that from Pechini method ie nano composite of ZnO and PEDOT/PSS/PEG films was investigated by FTIR and Raman for comparison.

參考文獻


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