低溫大氣壓電漿製備類二氧化矽薄膜

Investigation of Low Temperature Atmospheric Pressure Plasma Deposited SiOx Thin Films

吳信誼(Shin-Yi Wu)

指導教授 ： 黃駿

元智大學/工程學院/化學工程與材料科學學系/碩士(2009年)

https://doi.org/10.6838/YZU.2009.00328

摘要

本論文係利用大氣壓電漿技術以化學氣相沉積(CVD)法於高分子基材聚碳酸酯(Polycarbonate, PC)表面製備類二氧化矽薄膜，藉由本研究期望能有效改善高分子基材表面之抗磨損性及耐刮能力。於本實驗製程中所使用之反應前驅物分別為六甲基二矽氮烷(Hexamethyldisilazane, HMDSN)與六甲基二矽氧烷(Hexamethyldisiloxane, HMDSO)，搭配電漿功率、噴頭至基材表面距離及氧氣添加流率等實驗參數之調變製備薄膜，並藉由薄膜厚度量測儀、FTIR、XPS、AFM、紫外光-可見光光譜儀(UV-VIS)等分析探討薄膜性質變化，最後配合光放射光譜儀(OES)觀察電漿輝光放電現象，所得之光譜分析將與薄膜性質交互驗證。結果發現，經由大氣壓電漿技術所製備之類二氧化矽薄膜，可發現此薄膜性質乃受氧氣添加流率等實驗參數所影響，藉由適當氧氣添加流率所製備之類二氧化矽薄膜具有良好之無機特性，其C/Si元素比率為0.35，進一步將薄膜製備於高分子基材PC上，其表面鉛筆硬度等級可由6B以下提升至H，而透光度可由89 %提升至93 %，最後，使用大氣壓電漿表面改質技術改善薄膜與PC基材之附著度，比較製程前後可發現薄膜附著度能夠有效提升，該薄膜附著度為100 %。

關鍵字

大氣壓電漿 ； 化學氣相沉積法 ； 類二氧化矽薄膜 ； 高分子基材

並列摘要

In this study, atmospheric pressure plasma chemical vapor deposition (APPCVD) technique was employed to deposit SiOx thin film on Polycarbonate (PC) substrates. We anticipate improving the surface properties of plastic substrates. Hexamethyldisilazane (HMDSN) and Hexamethyldisiloxane (HMDSO) were utilized as the precursor for APPCVD. Atmospheric pressure plasma deposited SiOx thin films have been analyzed by the optical thin-film thickness detector, FTIR, XPS, AFM, and UV-VIS. With various operational parameters including in RF plasma power level, the distance of nozzle to substrate, oxygen gas flow rate, APP deposited SiOx thin films have been investigated for the change of surface properties and chemical composition. Moreover, Optical Emission Spectrometry (OES) was used for analysis the luminous gas phase of APPCVD process.
The experimental results determined that the oxygen gas flow rate is the key point of APPCVD process. Depending on the proper operational parameters, SiOx thin film has excellent inorganic features. The hardness of atmospheric pressure plasma deposited PC substrates was improved from 6B to H, and obtains a transmission of 93 % in the visible region. Atmospheric pressure plasma surface modification technique was employed to improve adhesion between SiOx thin film and PC substrate. After atmospheric pressure plasma surface modification, the adhesion of plasma modified PC substrate is improved from 0B (percent area removed＞65 %) to 5B (none area removed).

並列關鍵字

atmospheric pressure plasma ； chemical vapor deposition technique ； SiOx thin film ； plastic substrate

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