氧化鋅與氧化銦鎵鋅雙層薄膜電晶體之研究

The Study on ZnO and IGZO Double Layer Thin Film Transistors

施鈞維(Chun-Wei Shih)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2016年)

摘要

本論文分為二大部分，第一部分研究利用射頻濺鍍製作氧化銦鎵鋅薄膜電晶體，藉由改變氧流量、總流量、電漿瓦數等參數進行鍍膜，以改善元件基本特性，第二部分為搭配氧化鋅製作雙主動層薄膜電晶體，以獲得最佳元件特性。
實驗結果顯示，製備氧化銦鎵鋅電晶體時，使用氧流量4-6%，總流量125sccm，電漿瓦數125W之條件將具有較小的臨界電壓，較大載子飄移率及較小次臨界擺幅。
在製作氧化鋅與氧化銦鎵鋅雙層薄膜電晶體時，在電漿瓦數125W時有較大的電流開關比，在退火溫度250度有最佳電晶體特性。

關鍵字

薄膜電晶體 ； 氧化銦鎵鋅 ； 氧化鋅 ； 雙主動層

並列摘要

This thesis has two parts. First, the IGZO TFTs were fabricated by Pulsed-DC sputter deposition with different gas flow rate, oxygen ratio, and RF-power. Second, the double-layer TFTs were fabricated with IGZO and ZnO thin films.
As results, for IGZO TFTs, the devices fabricated with oxygen ratio of 4-6%, total flow of 125 sccm, and RF-power of 125 W showed the lower threshold-voltage, higher mobility, higher On/Off current ratio, and lower sub-threshold swing than that of other samples.
For IGZO/ZnO double-layer TFTs, the devices fabricated at RF-power of 125 W and with 250 oC annealing show better device performances than that of other samples.

並列關鍵字

Transparent semiconductor film ； InGaZnO ； ZnO ； double active layer

參考文獻

[1] 平面面板顯示器基本概論 作者:顧鴻壽等合編 高立圖書

[2] M. Katayama, “TFT-LCD technology”, Thin Solid Films, Vol. 341, No. 1-2, pp140-147, 1999.

[3] Toshio Kamiya, Kenji Nomura and Hideo Hosono , “Present status of amorphous In–Ga–Zn–O thin-film transistors” Sci. Technol. Adv. Mater. 11 (2010) 044305 (23pp).

[4] J.-S. Park, J. K. Jeong, Y.-G. Mo, H. D. Kim, and S.-I. Kim, “Improvements in The Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Ar Plasma Treatment,” Appl. Phys. Lett., Vol. 90, pp. 262106-1, 2007.

[5] P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, “Transparent ZnO Thin-Film Transistor Fabricated by RF Magnetron Sputtering,” Appl. Phys. Lett., Vol. 82, No. 7, pp. 1117-1119, 2003.