應用在氮化鎵高電子遷移率電晶體的銅閘極金屬阻障層之研究

Study of Cu Barrier Layers for Gate Metal on GaN High Electron Mobility Transistors Application

李芳茗

指導教授 ： 張翼

國立交通大學/工學院/工學院半導體材料與製程設備學程/碩士(2015年)

https://doi.org/10.6842/NCTU.2015.00530

摘要

本論文探討使用氮化鈦(TiN)和氮化鎢(WNx)作為擴散阻擋層的銅閘極於高功率氮化鋁鎵(AlGaN)/氮化鎵(GaN)的高電子遷移率電晶體(High Electron Mobility Transistors, HEMTs)閘極金屬(gate metal scheme)之應用。使用銅製程閘極之元件和傳統鎳(Ni)/金(Au)閘極元件有相近的直流特性。在VDS=200V, VGS=-5V的偏壓條件應力(stress)測試下有優異的性能，其IDS和IGS並沒有顯著的改變。而在攝氏250度下，經1小時的熱穩定性測試(thermal stability test)後，使用氮化鈦(TiN)/銅(Cu)和氮化鎢(WNx)/銅(Cu)作為閘極金屬的蕭基能障高度(Schottky barrier height)也和傳統鎳(Ni)/金(Au)相似。總的來說，以氮化鈦(TiN)/銅(Cu)和氮化鎢(WNx)/銅(Cu)作為高功率氮化鋁鎵(AlGaN)/氮化鎵(GaN)的高電子遷移率電晶體(HEMTs)之閘極金屬的元件，在高偏壓之stress測試中，顯示出優異的直流特性、熱穩定性、穩定的電性表現。

關鍵字

氮化鎵 ； 銅閘極 ； 阻障層 ； 氮化鈦 ； 氮化鎢

並列摘要

In this study, the copper gate metal with the titanium nitride (TiN) and tungsten nitride (WNx) as a diffusion barrier layer on AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated for high power application. To compare with the Ni/Au gate metal on AlGaN/GaN HEMTs, the Copper gate metal on AlGaN/GaN HEMTs was shown a similar direct-current (DC) characteristics. Moreover, the IDS and IGS characteristics of the Copper gate metal device were not significant reduction when measure at drain-source voltage of 200 volt and gate-source of -6 volt. Furthermore, the copper gate metal with the titanium nitride (TiN) and tungsten nitride (WNx) as a diffusion barrier layer on AlGaN/GaN HEMTs was shown DC properties similar to the Ni/Au gate metal on AlGaN/GaN HEMTs when measure the thermal stability test at 250 ℃for 1 hour. From the above results, the AlGaN/GaN HEMTs with the gate metal of the TiN/Cu and WNx/Cu was shown excellent DC characteristics, good thermal stability, and stable electrical performance at high bias stress testing.

並列關鍵字

GaN ； Cu gate ； Barrier Layers ； TiN ； WNx

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