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  • 學位論文

高頻電源轉換器之寄生元件諧振分析

Analysis of Parasitic Resonance for High Switching-frequency Power Converters

指導教授 : 陳耀銘

摘要


本論文之研究目的為高頻電源轉換器之寄生元件諧振分析,尋找寄生元件的形成,對寄生元件所形成的諧振分析,並降低電路上的寄生元件以抑制突波對電路。本論文中對於電源轉換器之寄生元件進行分析,著重於寄生電感的影響,回顧電感公式和幾何平均距離方法,將兩者結合後計算複雜形狀迴路的電感值,並使用模擬軟體與實作電路驗證公式的正確性。本論文亦對RLC 諧振進行分析與模擬,並將寄生元件值代入,得到電力級與控制的函數波形,並以實際電路進行驗證。最後提出電路佈線優化設計,對電力級與驅動電路分別提出對策,代入RLC諧振函數波型,並以實作驗證優化對策。

關鍵字

寄生元件 諧振 PCB佈線

並列摘要


In this thesis, analysis of parasitic resonance for high-switching converter is proposed. Parasitic components are analyzed and the way to reduced parasitic components is discussed. Also the RLC resonant model is formed, and lessen the parasitic components to reduce the effect caused by overshoot. In this thesis, parasitic components are focused on parasitic inductor. The formula of inductor and GMD method is combined to calculated the complex layout parasitic inductor, and the results are verified by both simulation and experiment. The RLC resonant is analyzed and modeled with parasitic components, and verified by experiment. The layout optimization strategy is proposed, both power stage and driver circuit, and RLC model is formed and verified by experiments.

並列關鍵字

parasitic components reonance PCB layout

參考文獻


[6] Hirokatsu Umegami, Fumiya Hattori, Yu Nozaki, Masayoshi Yamamoto, and Osamu Machida “A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET”, in IEEE Energy Conversion Congress and Exposition(ECCE), 2014, pp. 2954-2960.
[1] Shu Ji, David Reusch, and Fred C. Lee, “High Frequency High Power Density 3D Integrated Gallium Nitride Based Point of Load Module”, in IEEE Energy Conversion Congress and Exposition (ECCE), 2012, pp. 4267-4273.
[2] Pouya Aflaki, Renato Negra, and Fadhel M. Ghannouchi, “Dedicated Large-Signal GaN HEMT Model for Switching-Mode Circuit Analysis and Design”, IEEE Microwave and Wireless Components Letters, vol. 19, pp. 740-742, November 2009.
[3] Fumiya Hattori, Hirokatsu Umegami, and Masayoshi Yamamoto, “Capacitor-Less Gate Drive Circuit Capable of High-Efficiency Operation for Non-Insulating-Gate GaN FETs”, IEEE Transactions on Electron Devices, vol. 60,
pp. 3249-3255, October 2013.

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