極低頻(ELF)磁場會影響晶圓代工廠的產量。許多在28奈米先進製程的技術中所使用的電子顯影設備,如掃瞄式電子顯微鏡,穿透式電子顯微鏡,聚焦離子束顯微鏡以及電子束微影技術,極容易受到極低頻磁場的干擾。主動式消磁系統和被動式屏蔽方式是用來降低電磁干擾(EMI)的方式。主動式消磁系統是透過感測器偵測電磁場,回饋相對應的電流給系統上的線圈產生人造的電磁廠去抵銷原有的電磁場。主動消除方法雖然降低了在適當位置電磁干擾的影響,但是很容易因為電磁場引起的副作用造成附近的工具和/或高性能探頭故障。因此,研究了如何減輕上述的副作用。主動消除系統與C型坡莫合金材料包裹,並在實驗室進行實驗。初步結果顯示能有效降低副作用。
The extremely low frequency (ELF) magnetic fields influence the yield of CMOS foundry. Most high performance electron microscopes used in 12 nanometer processes, such as SEMs, TEMs, FIB and E-Beam writers, are very vulnerable to ELF magnetic fields. In order to mitigate electromagnetic influence (EMI), both active canceling and passive shielding methods are used. The active canceling system is using coils with current sensing electromagnetic field via sensor and inducing man-made electromagnetic field to reduce the stray field. Although active canceling method reduces the EMI impact on the right spot, it is not uncommon that the induced electromagnetic field causes side-effect that malfunction the nearby tools and/or high performance probes. Therefore, a study was made to mitigate the aforementioned side effect. The active canceling system was wrapped with C-type permalloy material and a laboratory experiment was conducted. And the preliminary results demonstrated the effectiveness of side-effect.
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