本論文使用台積電0.18μm 1P6M CMOS標準製程設計一個具備簡易後製程、低驅動電壓、低接觸電阻、低插入損失及高隔離度的新式單刀四擲射頻微機電開關。 本論文的研究內容從晶片的設計與模擬到後製程實驗,以及最終的量測結果,前三個章節分別介紹了本論文的研究動機、CMOS製程背景、射頻微機電開關之設計、模擬、後製程實驗,透過詳細的微機電背景知識介紹、鉅細靡遺的模擬與設計過程,最後再將實驗內容完整的呈現出來;第四章的部分敘述了後製程的實驗結果及量測結果,包括化鎳浸金製程的效果、微機電開關的驅動、單刀四擲功能測試以及高頻特性等等;第五章的結論及第六章的未來展望,總結了現階段研究的成果及可衍伸出的研究方向等議題探討。 本論文利用CoventorWare、HFSS等EDA模擬軟體輔助整體設計過程,並導入化鎳浸金(EN/IG)製程,可有效降低微機電開關的驅動電壓與接觸電阻值,在內文中將提供完整的設計流程及實驗數據。 本論文利用CoventorWare、HFSS等EDA模擬軟體輔助整體設計過程,並導入化鎳浸金(EN/IG)製程,可有效降低微機電開關的驅動電壓與接觸電阻值,在內文中將提供完整的設計流程及實驗數據。
This thesis presents the design of a new SP4T RF CMOS-MEMS switches by a 0.18μm CMOS-MEMS process which has the advantages of simple-steps for post-process, low driving voltage, low contact resistance, low insertion loss, and high isolation. The first three chapters of this thesis introduce the research’s background knowledge, CMOS process, and the designs and post-process of radio-frequency MEMS switches. These three chapters show the design methods and post-process records of RF MEMS switches. The forth chapter shows the results of measurement including EN/IG process, driving voltage of RF MEMS switches, function of SP4T and RF characteristics, etc. The fifth chapter and future work describe the current research results and other issues which could be extended from the research. In this thesis, it utilized several EDA tools for assisting the whole process such as CoventorWare, Ansoft HFSS, etc. Furthermore, it also introduced EN/IG process for reducing pull-down voltage and contact resistance. Most noteworthy is that there are all complete design flows and experimental results.