利用高介電材料製作與CMOS相容之可變電容

Design and Fabrication of variable capacitor by CMOS-MEMS process and high dielectric materials

徐毓堃(Yu-Kun Hsu)

指導教授 ： 黃榮堂

國立臺北科技大學/機電學院/機電整合研究所/碩士(2010年)

摘要

本研究利用國家晶片系統設計中心所提供之0.18μm 1P6M CMOS-MEMS製程設計及製作一個製作容易、高變化率以及低操作電壓，並且可與CMOS製程相容的微機電可變電容，其主要架構有一左右相對之梳狀電極、彈簧結構之上電極、高介電係數材料以及平板結構之下電極，其動作原理是利用靜電力的方式來驅動一具有高介電係數材料之上電極，當施加電壓於上下電極之後，上電極會向下吸附，並且帶動高介電係數材料向下移動，使得梳狀電極間的介電係數發生變化，已達到電容值可變的目的。

關鍵字

CMOS製程 ； 微機電製程 ； 可變電容

並列摘要

In the study, we use TSMC 0.18μm CMOS-MEMS to design the the micro-electromechanical variable capacitor with easy fabrication, high-change rate and low operating voltage. It is aslo compatible with CMOS process. The main structure includes the symmetric comb electrodes, spring top electrode, high dielectric constant materials and flatbed bottom electrode. The operating principle is to use static force to drive the upper electorde with high dielectric constant material. when the voltage is applied on the top and bottom electrodes, the top electrode move downward to increase the dielectric constant between the comb electrodes, which increases the capacitance of variable capacitor.

並列關鍵字

CMOS-MEMS ； tunable capacitor

參考文獻

[11] 國家晶片系統設計中心，“CIC eNESW 8”，2001.

[1] Bouchaud, J.; Knoblich, B.; Wicht, H.; “Will RF MEMS live up their promise?” Microwave Conference, 2006. 36th European, Page(s): 1076 – 1079, 2006

[3] F. Svelto, P. Erratico, S. Manzini and R. Castello, “A metal-oxide-semiconductor varactor,” IEEE Electron Device Lett., vol. 20, 1999, pp. 164-166.

[4] D. Young and B. Boser, “A micromachine-based RF low-noise voltage controlled oscillator,” IEEE Proc. CICC, May 1997, pp. 431–434.

[5] Lei Gu, Zhengzheng Wu, Xinxin Li,“An wide-range tunable on-chip radio-frequency LC-tank formed with a post-CMOS-compatible MEMS fabrication technique,” Microelectronics Journal 40 (1), 2009,pp. 131-136