消費性電子產品的發展過程,始終不斷地朝著低成本、低功耗、多功能、輕薄短小、高效率、Time to Market等多重構面發展,因此,隨著手機與可攜式產品等的多樣化功能蓬勃發展與演進,使得高效率的SoC(System on Chip)技術在Time to Market及異質整合上面臨困難。為了能面對在不同製程與異質元件整合因素,近年來由半導體廠商所提出整合3D Package及矽穿孔電極技術(Through Silicon Via, TSV)的三維堆疊式晶圓(3Dimension Stacked IC, 3D IC)技術,既可符合消費性電子產品市場多樣化的需求。3D IC製程中包含了晶圓薄化技術(Thinning)、鑽孔技術(Via Drilling;即TSV通道的形成)、導電金屬填入技術(Via Filling)、晶圓堆疊與接合技術(Bonding),其中又以晶圓薄化的技術最為重視。為了有效的研磨矽晶圓,研磨液中的研磨顆粒分散性是重要的課題。 本研究在於探討不同離子種類的界面活性劑(SDS、CTAB、Triton X-100)對奈米級二氧化矽膠體的穩定性影響,並應用於矽晶圓的研磨薄化上,以了解不同的研磨參數下,如壓力、轉速差、研磨液流量及濃度等,對晶圓研磨效率的影響。從實驗的結果得知,pH10的二氧化矽研磨液在三種不同種類的界面活性劑:SDS、CTAB及Triton X-100添加濃度分別為7.62mM、0.2mM及0.79mM下可以得良好的分散,其中又以Triton X-100之效果最好。另外,在矽晶圓研磨的實驗上,實驗得到了一適合的研磨條件:稀釋20倍的研磨液流量0.2L/min、研磨壓力25kPa、研磨盤上下轉速差550/505rpm,並在研磨時間3分鐘下可得到良好的晶圓研磨效率及平坦度。
Consumer electronics product development process, has been toward low-cost, low power, multi-function, compact size/slim and light, efficiency, time to market and many other diversification development, such as mobile phones and portable products versatile development and evolution of function, making efficient SoC (System on Chip) technology in the time to Market and heterogeneous integration dimension of the difficulties faced, in order to face the different processes and integration of heterogeneous components on technical factors, in recent years by the semiconductor manufacturers integration of 3D Package and Through Silicon Via technology wafer three-dimensional stack (3Dimension Stacked IC, 3D IC) technology, which manage consumer demand for electronic products market diversification. The 3D IC technology is composed of thinning, via Drilling, via Filling and Bonding, especially for thinning of the silicon wafer. This study explores the effect of the different types of surfactant(SDS, CTAB and Triton X-100) to the stability of nano-SiO2 disperses in grinding of silicon wafer by slurry, to understand the different grinding parameters, such as pressure, speed difference, flow rate and concentration of slurry and so on silicon wafer grinding efficiency. According to the results in this study, the SiO2 particles are dispersed useful by adding SDS, CTAB and Triton X-100 in concentration 62mM, 0.2mM and 0.79mM, respectively. Triton X-100 was better among these surfactants. The results in grinding of silicon wafer, the best removal rate can be reached by suitable grinding parameters, slurry flow rate 0.2L/min、grinding pressure 25kPa、Spindle Speed 550rpm。