A new amorphous silicon/silicon carbide metal-base transistor has been successfully fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition (PECVD). The operating characteristics of the transistor effect and evidence for true injection have been observed. The measured common-base current-transfer ratio is 9.75% at a collector field of 7.5×10^4V/cm and an emitter current of 0.2 mA. The ballistic mean free path in Pt obtained from the current-transfer ratio is 97 Å.