The Electrical Transport of Intercalated BSCCO

J. H. Lee ； G. -T. Kim ； Y. W. Park ； J. -H. Choy ； S. -J. Hwang ； W. Lee

《Chinese Journal of Physics》 36卷2S期 (1998/04) Pp. 316-323

並列摘要

The anisotropic electrical resistivity of HgBr2 intercalated Bi-2212 single crystal and the electrical resistivity and thermoelectric power(TEP) of AgI, I2 and HgI2 intercalated polycrystalline Bi-2223 are measured. In the normal state (T ＞ Tc), the semiconductor-like behavior of p,(T) of the pristine Bi2Sr2CaCu2O7, becomes metallic upon the HgBr2 intercalation, while pab(T) remains metallic. The resistivity data of the HgBr2 intercalated samples, show anomalies at T = 250 K reminiscent of a phase transition. The results indicate that the charge transfer from HgBr2 to the CuO2 plane is important, which supports the picture that the doping induced holes in the copper oxide sheets are responsible for the high temperature superconductivity. Meanwhile, the intercalated polycrystalline Bi-2223 shows semiconductor-like resistivity with two T, about 25 K lower than that of the pristine Bi-2223 (Tc ~ 100 K). The magnitude of TEP increases upon intercalation, which indicates the charge transfer mechanism for the Bi-2223 may be different from that of the Bi-2212.