氮化鎵二維電子系統之傳輸特性

transport in two-dimensional GaN electron systems

黃健哲(Jian-Zhe Huang)

指導教授 ： 梁啟德

國立臺灣大學/理學院/物理研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.00103

摘要

無資料

關鍵字

二維電子 ； 氮化鎵

並列摘要

Abstract
This thesis describes the measurements on the low-temperature electron transport properties in a two-dimensional GaN electron system. This thesis consists of the following two parts:

1. Electron-electron interaction in a perpendicular magnetic field:
We report on experimental studies of Al0.15Ga0.85N/GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultra thin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (>3 times). This SiN treatment technique also allows the observation of Shubnikov-de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave way to integration of AlxGa1-xN/GaN HEMT structures with the mature Si technology in industry.

2. Weak localization effect in a perpendicular magnetic field:
We can illustrate weak localization by the constructive interference of wave functions which back to the origin after transmitting along time-reversed paths. Electrons will be localized by weal localization. The dephasing time , which determines the time scale kept the constructive interference of wave functions, limits the length of the time-reversed paths. It is known that weak localization causes a negative magnetoresistivity.

並列關鍵字

2DES ； GaN

參考文獻

[16] K.-T. Wu, P. H. Chang, S. T. Lien, N. C. Chen, C.-A. Chang, C. F. Shih, W. C. Lien, Y. H. Wu, S.-C. Chen, Y. H. Chang, and C.-T. Liang, Physica E 32, 566 (2006).

[18] C.-T. Liang, K. Y. Chen, N. C. Chen, P. H. Chang, and C.-A. Chang, Appl. Phys. Lett. 89, 132107 (2006).

[7] Y.-F. Wu, B. P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, S. P. Denbaars, and U. K. Mishra, Appl. Phys. Lett. 69, 1438 (1996).

[12] C.-T. Liang, Li-Hung Lin, J. Z. Huang, Zhi-Yao Zhang, Zhe-Hau Sun, Kuang Yao Chen, N. C. Chen, P. H. Chang, and Chin-An Chang, Appl. Phys. Lett. 90, 022107 (2007).

[26] J. R. Juang, T.-Y. Huang, T.-M. Chen, M.-G. Lin, G..-H. Kim, Y. Lee, C.-T. Liang, D. R. Hang, Y. F. Chen, and J.-I. Chyi, J. Appl. Phys. 94, 3181 (2003).