以低溫電漿輔助化學氣相沉積TEOS SiO2薄膜之 應力特性研究

Investigation of the low stress TEOS SiO2 films by low temperature PECVD processing

黃郁庭(Yu-Ting Huang)

指導教授 ： 陳昇暉

國立中央大學/理學院/光電科學與工程學系/碩士(2015年)

摘要

以矽酸四乙酯(TEOS)材料在低溫的電漿輔助化學氣相沉積法成長出具
有高密度和低應力的SiO2薄膜。針對幾項製程參數包括鍍膜壓力、氧氣流
量、TEOS 流量、高低射頻的功率及沉積溫度等進行調整並且分析製鍍薄膜
的品質。
實驗結果顯示，當沉積速率提高時，薄膜的密度將會變低，而較低密
度的薄膜會造成低的薄膜應力。我們發現TEOS SiO2薄膜的應力與薄膜密度
及沉積速率有很大的相關性，在調整鍍膜壓力、氧氣流量、TEOS 流量...
等參數下，會使SiO2 薄膜沉積速率、應力及密度有較明顯的變化。
最後我們依照實驗結果找出最佳的鍍膜條件:為沉積壓力約在4torr、
TEOS 與O2當量比在8.1%、鍍膜溫度在200oC 的條件下，所備製出的TEOS SiO2
薄膜具有高密度以及低應力的薄膜品質，其薄膜的沉積速率約41±2.0Å/sec
,其蝕刻速率約在1100±55Å/sec。且控制應力值約為300±20Mpa 的壓應力薄
膜。

關鍵字

矽酸四乙酯(TEOS) ； 電漿輔助化學氣相沉積製程

並列摘要

Tetra-ethyl-ortho-silicate (TEOS) SiO2 thin films were deposited
using low temperature Plasma-enhanced chemical vapor deposition
(PECVD) to achieve the performances of low stress and high density.
Several process parameters including working pressure, O2 flow rate,
TEOS flow rate, high and low frequency power rates, and working
temperatures were adjusted to analyze the quality of the films.
The results show when the deposition rate is high, the density
of the film is low. And the lower density of the film will affect
the lower stress. We found out the stress of TEOS SiO2 film has strong
correlation by the high film density and slow deposit rates. The
working pressure, O2 flow and TEOS flow rate can play important roles
for the stress and density of the TEOS SiO2 films.
Finally, we found out the high film density and low stress conditions
keep the deposition pressure at 4torr, TEOS / O2 ratio at 8.1%
and working temperature at 200 degrees. The deposition rate was about
41±2.0Å/sec. the etching rate was about 1100±55Å/sec.The stress of
the SiO2 film was compressive and the stress value range was at
300±20Mpa.

並列關鍵字

Tetraethyl orthosilicate (TEOS), PECVD processes

參考文獻

[16]吳駿逸,”不同製程下以 Si 與SiO2為起始材料所製鍍出的SiO2薄膜特性

[17]蔡淑儀, ”利用感應耦合電漿化學氣相法在及低溫下沉積SiO2薄膜以備

[6] K. Ramkumar, S. K. Ghosh, and A. N. Saxena, ”Stress Variations

[8] X.Zhang, R. Ghodssi, K. S. Chen, A.A. Ayon, S.M. Spearing,”

[4]E. P. ven de Ven, I. W. Connick, A. S. Harrus, “ Adventages of Dual