stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
-  T. Söderström, F. J. Haug, X. Niquille, V. Terrazzoni, C. Ballif, “Asymmetric intermediate reflector for tandem micromorph thin film silicon solar cells” APPLIED PHYSICS LETTERS 94, 063501 (2009).
-  S. Fay, U. Kroll, C. Bucher, E. Vallat-Sauvain, A. Shah, “Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells: temperature-induced morphological changes” Solar Energy Materials & Solar Cells 86 (2005) 385-397.
-  J. Hüpkes, B. Recha, O. Kluth, T. Repmann, B. Zwaygardt, J. Muller, R. Drese, M. Wuttig, “Surface textured MF-sputtered ZnO films for microcrystalline silicon-based thin-film solar cells” Solar Energy Materials & Solar Cells 90 (2006) 3054–3060.
-  C. J. Kim, D. Kang, I. Song, Jae C. Park, H. Lim, S. Kim, E. Lee, R. Chung, J. C. Lee, Y. Park,”Highly Stable Ga2O3-In2O3-ZnO TFT for Active-Matrix Organic Light-Emitting Diode Display Application”, Electron Devices Meeting, 2006. IEDM '06. International.
-  K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, S. Niki, ”Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes”, Japanese Journal of Applied Physics Vol. 43, No. 2A, 2004, pp. L 180–L 182.
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