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Search Symbol (Half-width) Description of Search Symbols
Space "AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " ) Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" : " image process "
? Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
* Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT

Boolean logic combinations of key words is a skill used to expand or refine search parameters.
(1) AND (1) AND: Refines search parameters
(2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

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DOI stands for Digital Object Identifier ( D igital O bject I dentifier ) ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」 「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registrationdoi.airiti.com ) 。

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Abstract 〈TOP〉
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Reference ( 50 ) 〈TOP〉
  1. 1 P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. horkans, H. Deligianni, Damascene “copper electroplating for chip interconnections”, IBM J. Res. Develop., 1998, 42, 567.
    連結:
  2. 5 P. Dixit, L. Xu, J. Miao, J. H. L. Pang, and R. Preisser, “Mechanical and microstructural characterization of high aspect ratio through-wafer electroplated copper interconnects”, J. Mircromech. Microeng., 2007, 17, 1749.
    連結:
  3. 6 T. R. Rosebrugh and W. L. Miller, “Mathematical Theory of the Change of Concentration at the Electrode, Brought about by Diffusion and by Chemical Reaction”, J. Phys. Chem., 1910, 14, 816.
    連結:
  4. 7 J. J. Sun, K. Kondo, T, Okamura, S. Oh, M. Tomisaka, H, Yonemura, M. Hoshion, and K. Takahashi, “High-Aspect-Ratio Copper Via Filling Used for Three Dimensional Chip Stacking,” J. Electrochem. Soc., 2003, 150, 355.
    連結:
  5. 8 K. Kondo, T. Yonezawa, D. Mikami, T. Okubo, Y. Taguchi, K. Takahashi, and D. P. Barkey, “High-Aspect-Ratio Copper-Via-Filling for Three-Dimensional Chip Stacking”, J. Electrochem. Soc., 2000, 152, H173.
    連結:
Times Cited (4) 〈TOP〉
  1. 張佑祥(2011)。新穎的奈米銅粒子合成方法及其在矽通孔晶種層催化觸媒上的應用。中興大學化學工程學系所學位論文。2011。1-153。 
  2. 周嘉珮(2011)。以無電鍍法沉積矽通孔之阻障層與導電層。中興大學化學工程學系所學位論文。2011。1-112。 
  3. 張世誠(2014)。以石墨烯當導電層與阻障層用於矽通孔之電鍍填充。中興大學化學工程學系所學位論文。2014。1-161。
  4. 陳柏廷(2017)。利用還原氧化石墨烯之接枝於矽與玻璃穿孔之電鍍銅填充研究。中興大學化學工程學系所學位論文。2017。1-176。
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