very critical for my graduatestudies. Besides, they gave lots of freedom to me to study my novel SiGeSn material system, we first study thefundamental properties of Si, Ge, and α-Sn
polarization charges in N- and Ga-face AlGaN/GaN heterostructures," Journal of Applied Physics, vol formation of two-dimensional electron gases in defective rf-sputtered MgZnO/ZnO heterostructures
合結構應用於寬波段紅外光偵測及熱輻射控制之研究 Study of broadband infrared photodetection and thermal spectral range. We used back illuminated schemes of TiN thin film along with deep trench
為了持續優化網站功能與使用者體驗,本網站將Cookies分析技術用於網站營運、分析和個人化服務之目的。
若您繼續瀏覽本網站,即表示您同意本網站使用Cookies。