Thesis 氮化鎵奈米柱發光二極體之光萃取效率提升及偏極化光源達成 On Power Enhancement and Polarized Light GaN-based , “Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface
. Lee, “Light Output Enhancement of GaN-Based Roughened LEDs Using Bias-Assisted Substrate Shape on Light Output Power of GaN-Based LEDs," IEEE Photon. Technol. Lett. 23, 944
, "Enhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys
in situ on a p-GaN surface from the decomposition of a zinc acetate precursor at 300°C based near UV emission light emitting diodes” shows our experiment results of ZnO/p-GaN
textured p-GaN layer [1-2]. In this case, the enhancement of light output power can also be by intentionally growing a rough p-GaN layer on top of the flat p-GaN surface [1-2
in Fig. 2-1(a). Here, on the p-GaN layer, a triangularly patterned nano-hole array of 100 Thesis 具金屬奈米結構之表面電漿子耦合發光二極體 Surface Plasmon Coupled Light-emitting Diodes with Metal
, “Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Applied Physics
shallow PhC structure on the surface of the light-emitting mesa as surface texturing for the toward the p-type light-emitting mesa, thus decreasing the amount of power enhancement
Effects on the p-GaN Thickness of a Thin-p-type Light-emitting Diode of Thin-p-type Light-emitting Diodes with Surface Plasmon Coupling 蘇佳瑩 Chia-Ying Su 指
designated thickness (3 or 6 nm) on the p-GaN surface at the bottom of a patterned hole. Then, an layer of 2 nm in thickness on either p-GaN or various DIs, followed by a thermal annealing
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