Reagents..........................................734.2.2 Setup of the High-Density-Plasma Reactive-Ion-Etching System....744.2.3 Fabrication of pH-EGFET Sensors Based on the
, the highcosts of epitaxial substrates and special fabrication processes is the bottleneck fabrication process of metal-semiconductor contact containing a controllable Schottkyiii
on stripedsapphire substrates patterned by wet chemical etching, Journal of Crystal . Horng, etal., Fabrication of pyramidal patterned sapphire substrates for high-efficiency
performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching the sapphire substrates by a spin coater. In order to increase the etching depth of sub
跟濺射蝕刻的優點,具有高選擇比及非等向性。藍寶石基板要製作成PSS常用的是HDP-RIE(High Density Plasma ReactiveIon Etching),藉 pyramidal patterned sapphire substrates forhigh-efficiency InGaN-based light emitting diodes, J
2-5 The high density plasma ICP-RIE system is used for dry etching.................22 Figure 2-5 The high density plasma ICP-RIE system is used for dry etching.Figure 2-6
movement of electrons in a high vacuum environment to producehigh-density plasma. This machine precursor in oxygen or oxygen-argon plasma.High-density plasma deposition of silicon dioxide
substrates, thereby bridging various applications of color imaging technologies. Key Words device was simulated by the 3D-FDTD method. (a) The incident light having a wavelength of 248
study developed the fabrication, self-assembly arrangement and etching of polystyrene micro 25 (2) 蝕刻後繼續以 PS 微球作為擋層,接著以高密度電漿(High-density plasma, HDP)蝕刻系統進行第二段蝕刻,其上電極射頻功率(RF
LEDs grown on wet-etched patterned sapphire substrates,” IEEE Photonics Technology Letters index (n=1.5 for PMMA, 1.7 for D1 and 1.9 for A54)onto the ITO of LED by roller imprinting
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