mobility in Ge-Sn alloy system,” Physical Review B, vol. 75, no. 4, p. 045208, 2007. [8] C electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates,” Applied Physics Letters, vol. 104, no
calculation by CASTEP package in Materials Studio to simulate the band structures of Ge and GeSn creating a supercell of Ge and replacing different amounts of Ge atoms with Sn atoms. The
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