, No. 4, PP. 223-227 (2006) – 223 –High-Efficiency InGaN-based Light- EmittingDiodes with High-Efficiency InGaN-based Light- Emitting Diodes with Nanoporous GaN:Mg Structure
Yang, Jing-Hui Zheng, and Jing-Jie Dai, “High-Efficiency InGaN Light-Emitting Diodes Via Sidewall Selective Etching and Oxidation” Journal of The Electrochemical Society
-based light-emitting diode (LED) with an approach combining PEC wet etching and phase mask light-emitting devices by using photoelectrochemical (PEC) etching technique are
XIIChapter 3 Bipolar Cascade Light-Emitting Diode and Superluminescent Diodes.57 , ease of integration, high efficiency and long lifetime, in contrast to the bulky, low
, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High-efficiency InGaN light-emitting diodes via , H. Narimatsu, and S. Nakamura, "Amber InGaN-based light-emitting diodes operable at
, “High-efficiency InGaN light-emitting diodes via sidewall selective etching and oxidation -enhancedtransmission on high-efficiency surface-textured light-emitting diodes,” Applied
]. …………12 Figure 1-16: Sapphire-substrate-grown InGaN samples and the excitation/emission Chapter 6 Narrow-band amplified-emission of a-Si QDs via the coupling between LSPs and Fabry
operation. Effects of process approaches、etching depth and thermal alloy temperature to with operating current of 208mA/mm and Vth of 1.7V, the etching process window to achieve
optoelectronic conversion efficiency of solar cells, great power extraction of light-emitting diodes light emitting nanoparticles also plays an important role. Electromagnetic simulations
為了持續優化網站功能與使用者體驗,本網站將Cookies分析技術用於網站營運、分析和個人化服務之目的。
若您繼續瀏覽本網站,即表示您同意本網站使用Cookies。