formation between Plasma-Enhanced Chemical Vapor-Deposited (PECVD)silicon thin films and H structure.Amorphous and epitaxial silicon thin films deposited on H-terminated c-Si wafers are
formation between plasma-enhanced chemical vapor-deposited (PECVD)silicon thin films and H structure.Amorphous and epitaxial silicon thin films deposited on H-terminated c-Si wafers are
...............................................................................31 4.1 Analysis of undoped silicon thin films ...................................................11 Fig. 3 The absorption range of the a-Si and µc-Si solar cell at the spectral
The Optical Characterization of Epitaxial SiGe, Al2O3Passivated Si and Amorphous Silicon ................................................................................... 55 4.3.1 Optical analysis of a-Si:H deposited with and without H2 ............ 55 4.3.2
. ................. 52 Fig. 3.7 SEM micrographs of the surface and the cross section of AgInSe2 thin films absorption coefficient of a-Si material, the thickness of a-Si thin film can be less than 1 µm
alternative method enabling the metal-induced lateral crystallization(MILC) of a-Si films. Glass spin coated on a-Si deposited on glass substrate with spin speed of 500,750, and 1000 rpm
Flow Rate on Electrical and Optical Properties of(ic-SiOx:H(n) Films improved.The structure of yc-Si:H can be described as the transition between a-Si and c-Si with
Dependence of deposition parameters on opto-electrical properties ofa-SiOx:H(p) thin films and further improved.The structure of yc-Si:H can be described as the transition between a-Si and
/ a-Si:H Tandem Solar CellIn the area of thin-film a-Si based solar cell technology, one ..............................................243.3 Instruments for the Characterization of the Thin-Film ............263.3.1 Raman
of (a) four-fold coordinated B, and (a) Si-H-B complexesand in B-doped pic-Si:H network . With use of the IRLTRJ/IRL structure of a-Si :H(n)/pc- S iOx: H(n)/pc-Si:H(n)/pc-SiOx:H(p
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