[GAO1]……………………………..9 Fig.1.5 Intermetallic growth at the interface between Cu pads and SAC XIIphase was the only compound observed at the interface…………………...37 Fig. 4.2
/Cu bonding structure with a singleNi layer, only the Ni3Sn4 phase formed at the bonding formed at theinterface between the Cu pillar and solder reacted at 423 K (150°C). The
]. ...................................................................................................................................... 13 Figure 1-5 Schematic drawing showing the Sn-corner of the Sn-Cu-Ni isotherm at 240oC Figure 2-7 (a) Interface after step A2. A thick layer of (Cu,Ni)6Sn5 formed at the interface
-18 Dissolution of Cu at the interface of solder-Cu substrate [25] ..... 41 Fig. 4-19 Chapter 6 Fig. 6-1 TEM micrograph showing a thin columnar Cu3Sn at the interface between Cu
range of 0-8 wt.%, with the objective of identifying the optimal Ag addition. It is found higher than 3.5 wt.%, Ag3Sn becomes the primary solidification phase and large Ag3Sn plates
products at the Sn-basedsolder/Ni interface were very sensitive to the Cu concentration in the fatigue [48]. Fracture tends to take place along the interfacebetween the solder joint and the
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