, composed of Ba-Ti-Si- O existing in 1050 oC heated sample, (b) connected pores gradually element in BaTiO3. For the other samples, the sintering temperature of Y/Si coated BaTiO3
.........................................................................................................................................73 Figure 4-4 The column crystals in TiAlN/Si system: (a) As-deposited; (b) Annealed at 800 for℃ 2 hrs. .74 Figure 4-5 The column crystals in TiAlN/Si system (low
structure of FGC may cause stress concentration and shorten the life of the system. In this stress concentra-tion and non-continuous problem of diffusion in the rotating cylindrical
Pt/Ti/Si by IBSD. In addition, the detailed processing of thin films will be investigated. PNZT 薄膜沉積於未加熱之白金/鈦/矽晶圓(Pt/Ti/Si),後續熱處理溫度選擇 600 以及 700 oC。製備後薄膜利用 XRD,SEM,TEM 以及AFM,進行膜厚量測
solder as Ti2Sn3 in both Ni-Sn and Cu-Sn system. In addition, Ti addition have no apparent compatibility. Ni3Sn4 can withstand more than 4 % strain in preferred slip system, (100)[010]. The
be result from residual stressis observed in the composite thin film (Garphene /Ti/Cu presence of Ti on seeding layer (Ti/Cu) due tosome stress in the deposited film, which
7.8 ± 0.94%. In Hopkinson bar impact tests, (CrCoNi)94Al3Nb3 demonstrated a true stress of ]............................................................................................................................... 27 Figure 2-11 TCP phases evolution in Ni-based superalloy under different temperature
ferroelectric phase on Pt/Ti/SiO2/Si substrate with the assistance of ZrO2 using as the capping .................................................................... 23 2.3.3 Ferroelectricity in HfO2-based system
, and M. Kawasaki, Control of ferromagnetism at room temperature in (Ti,Co)O2−δ via chemical ..................................................................... 40 圖 3-15 沉積在(a)Si 基板、(b)石墨板的 Ti/ NdFB /Ti 薄膜 ............................... 40 圖 3-16
]. ...................20Table 1-3 Specific contact resistance of reported Ni-, Ti-, W- and Co-based silicides a basic unit in SiC......................24Figure 1-4 Lattice planes of SiC system are
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