selective epitaxial growth is reported by Intel [Figure 1-5(d)] [34]. The source and drain Ge(SiGe)-on-Insulator Technology and SiGe Nanostructure Epitaxial Growth By Cheng
solely at the surface of the substrate and layer-by-layer growth, it is a surface-controlled efficiently and accurately in order to modify the parameters of progress. The aim of this study is
the crystal growth condition of plasma level. The alloy compositions and thickness were ………………………………………………………..61 Figure 3.17 The relation of growth temperature and Indium concentration…………. 62
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