?................................................41.12 Challenges and current progress of InGaSb material for CMOS applications .61.1.3 Chapter 11.1.2. Challenges and current progress of InGaSb material for CMOS
tunnelingbarrier and obtain higher ON-currents.In this thesis, the simulation study of III-V this material system at Vd =0.3V andVg =0.5V and SS of 66mV/decade. For an axial NW
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