- 期刊
Effect of Etching Parameters on Gate Profile by Anisotropic Chemical Etching
異向性化學蝕刻參數對閘極輪廓影響之研究
摘要
This pioneer study presents the phenomena of anisotropic chemical etching in the range of the linewidth 15nm~100nm. In this study, a phase-field model is established and a resist mask is appointed on the surface to simulate a chemical etching process with a gate geometry. In the numerical simulations, the isotropic and anisotropic etching conditions are both evaluated to explore the fine chemical etching circumstances. In addition, the influences of etching parameters, such as the etching rate and the strength of the anisotropy, on the characteristics of gate profile are also demonstrated. From the simulation results, it shows that a larger loss of linewidth or a higher etch bias is involved with the increase of the etching rate. While an anisotropic etching is considered, a faceted-etching profile would be generated and simultaneously the etch bias could be suppressed during the etching process. As the anisotropy is strengthened, the characteristic profile becomes more distinct with a less loss of the linewidth. These numerical simulations could provide a methodical guidance to concisely control the fine etching profile, and broaden the applications of chemical etching in the advanced robust manufacturing technologies.
並列摘要
本研究前瞻地提出當線寬在15nm～100nm範圍內之異向性化學蝕刻現象研究。於本研究中，以相場模型建立基材表面上具有線幾何設計之光阻圖樣以進一步模擬閘極化學蝕刻製程。為了更詳盡探討化學蝕刻環境之影響，本研究比較等向性與異向性不同之蝕刻條件。此外，對閘極輪廓特性有決定性之影響因素，如蝕刻速率與異向性強度等，也一併深入探究。模擬結果發現，隨著蝕刻速率的提高，會產生較大的蝕刻偏差。但異向性蝕刻因產生多面向蝕刻之影響，將可抑制此過度的蝕刻偏差。而增強異向性蝕刻之強度，其閘極輪廓將因線寬損失的降低而更為清晰。本研究所提出之方法將可為化學蝕刻提供製程參數之設計規則，以便能更精細的控制化學蝕刻形貌與輪廓，並進一步擴展了化學蝕刻之應用範圍。