- 期刊
以微波電漿化學氣相沉積法在鑽石緩衝層上成長立方氮化硼薄膜
Growth of Cubic Boron Nitride Films on Diamond Buffer Layers via MPCVD
摘要
本研究以微波電漿化學氣相沉積法(MPCVD)，利用乙硼帶(B2H6)與氨氣(NH3)反應來合成氮化硼薄膜，改變製程參數以期獲得最大量的立方氮化硼(c-BN)薄膜，實驗結果發現基材偏電壓、電流密度、腔體壓力、與氫氣含量會影響c-BN的生成。由於鑽石與立方氮化硼的晶格常數具有良好匹配性，選擇鑽石薄膜作為鍍c-BN薄膜的緩衝層，期望能磊晶成長大量的c-BN，實驗結果發現鑽石晶粒的大小會影響c-BN的生長。若鑽石緩衝層1 vol.% CH4/H2所合成，生成的鑽石晶粒為微米級鑽石，其表面較組糙，其上所合成的BN薄膜，c-BN含量只有25%；當鑽石緩衝層以1 vol.% CH4/Ar所合成時，生成的鑽石晶粒為奈米級鑽石，其表面較平滑，在其上所合成的c-BN含量可達到70%；若是以奈米鑽石薄膜與BN交互形成多層膜，其c-BN含量則高達90%，厚度可達5.3μ並且具有良好的品質與降著性。
並列摘要
Cubic boron nitride (c-BN) films were synthesized by the reaction of diborane (B2H6) and ammonia (NH3) in microwave plasma-assisted chemical vapor deposition (MPCVD) system. As-grown films were investigated using scanning electron microscope (SEM), X-ray diffraction (XRD). Fourier transform infrared (FTIR) and Raman spectroscopy. The results indicated that the formation of c-BN was influenced by the substrate bias, plasma current density, chamber pressure and hydrogen content in the gas mixture. The effect of diamond as a bufferlayer, prepared using the same MPCVD system, is studied. It is found that c-BN grows epitaxially on diamond film is possible. The grain size of diamond films affected the nucleation and growth of c-BN films. The BN film of 25% c-BN grows on microcrystalline diamond film prepared form 1 vol.% CH4/H2, while the BN film of 70% of c-BN is deposited on the smoother nanocrystalline diamond film from 1 vol.% CH4/Ar. Adherent multiplayer of diamond and BN with 90% c-BN and of a total film thickness of 5.3μm was obtained.