Heat Treatment Effects on the Radiation Stability of the Schottky Barrier on the Base of n-Ge

A. Aliyev ； R. Madatov ； I. Askerov ； S¸. Okuducu

《Chinese Journal of Physics》 41卷1期 (2003/02) Pp. 75-78

並列摘要

An analysis of a method for increasing the radiation stability of semiconductor devices is presented in this study. For this purpose, in n-Ge, thermal defects were preliminarily created, and their interaction with radiation defects in the irradiation process was investigated by photocapacity and photoconductivity methods. It was found that, when interacting with radiation defects in the irradiation process, preliminarily created thermal defects in n-Ge form more stable defects, which lead to an increase in the radiation stability of the diodes. The obtained experimental data indicates that heat treatment of germanium at temperatures of t≥500℃ forms defects with intrinsic structural disturbances in the crystal lattice itself. These defects interact with radiation defects during irradiation to form more stable defects, leading to an increase in the radiation stability of the material. The fact that the insertion velocity of the radiation defects in thermally treated samples is less than in thermally untreated samples indicates that thermal defects are responsible for mobile radiation defects. PACS. 61.80.Jh - Ion radiation effects.PACS. 61.90.+d - Other topics in structure of solids and liquids.