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具電流侷限分佈發光二極體之製法

The Current Blocking Effect of (Alx Ga1-x)0.5 in 0.5 P Light Emitting Diodes by Wet Oxidation

摘要


本文以濕氧化技術研製具DBR結構之發光二極體(LED),得到具電流侷限(Current Blocking)分佈之發光二極體。LED元件經適當濕氧化(Wet Oxidation)條件,可以有效地侷限LED電流分佈,並藉由將P型電極設計成環狀,使得LED晶粒的發光強度不會被電極阻擋。由實驗結果得到,使用濕氧化的技術可以有效提高(AlxGa1-x)0.5In0.5P LED的發光亮度。

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並列摘要


The current blocking effect with Distributed Bragg Reflector (DBR) structure of (AlxGa1-x)0.5In0.5P light emitting diodes (LED) was proposed by using wet oxidation technology. By the optimal wet oxidation conditions, it can confine the current distribution through the p-n junction into the LED’s periphery contact ring center region effectively and also improve the light emitting diodes brightness.

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