氮化物半導體發光二極體近況

The Recent Status of Nitride Semiconductor Light Emitting Diodes

陳進祥(Chin-Hsiang Chen)

《真空科技》 16卷3期 (2003/01) Pp. 50-57

https://doi.org/10.29808/JVSROC.200301.0008

摘要

本文係筆者整理一系列氮化物半導體發光二極體(LED)之近況，包括磊晶技術發展、P型氮化鎵透明歐姆電極形成技術、其他提昇亮度之製程技術及白光LED市場與未來展望，希望能對國內相關產業研發先進同仁們能有所助益。

關鍵字

氮化物半導體 ； 發光二極體 ； 透明接觸電極層 ； 分散布拉格反射器 ； 緩衝層

並列摘要

This paper is about the recent status of nitride-based semiconductors light emitting diodes (LED) which were collected by the author. These recent conditions consist of the technical development of epitaxy, the fabrication technique of p-type GaN transparent contact layer (TCL), related process issues that can improve the light output power, the market of white LED, and the future forecast of white LED. We hope that these data can be helpful to all the advanced engineers and colleagues in the related industry in Taiwan.

並列關鍵字

Nitride semiconductor ； LED ； TCL ； DBR ； Buffer layer