- 期刊
快速熱退火氣氛對化學浴沉積製備ZnS薄膜之影響
Effects of Rapid Thermal Annealing Atmospheres on the Microstructural Development of ZnS Thin Films by Chemical Bath Deposition
摘要
化學浴沉積技術(CBD)乃製備Ⅱ-Ⅳ族半導體之硫化鋅(ZnS)薄膜的簡易方法。吾人利用不同種類鋅離子源及硫離子源調配為反應前驅物溶液，並於不同酸鹼性的環境下沉積於玻璃、矽晶片或高透光率材料基板表面。本文旨在於探討於化學浴沉積之ZnS薄膜，在於不同氣氛(Ar, N2, O2)條件以快速熱退火製程(RTA)進行熱處理，以期能有效地提升ZnS薄膜之緻密性與光電性質。針對ZnS薄膜表面狀態、薄膜厚度、透光率與ZnS薄膜能隙之分析量測，吾人將探討比較退火製程氣氛之最適化，如此可應用於製備高效應的CIGS薄膜太陽能電池中緩衝層薄膜。
並列摘要
Semiconductive zinc sulfide thin films can be synthesized by a simple wet chemical route, which are deposited on the surface of glass or silicon wafer substrates in a chemical solution containing the precursors of different zinc and sulfur ion sources, which can be modified by selective proper acidity and complexing agents. This paper emphasizes the atmospheric effect (ambient, oxygen, and nitrogen) during the rapid thermal annealing (RTA) process for ZnS thin films prepared by the chemical bath deposition (CBD) process on the microstructural development. The RTA process will be carefully optimized in order to obtain the suitable properties of ZnS such as film thickness, transmission coefficient, and band gap to meet the desirable feature of the buffer layer used in future thin film solar cells.