摘要
非揮發性吸附(NEG)鍍膜鋁合金真空腔經由高溫烘烤活化後可提供乾淨的真空腔表面及良好的抽氣速率。Ti-Zr-V(Ti-30%, Zr-30%, V-40%)NEG鍍膜鋁合金真空腔活化的過程是將真空腔加熱至180℃持溫24小時或是200℃持溫2小時，曝光測試是在台灣光源(TLS)的19B1白光光束線進行，測量真空腔內部曝光之表面釋氣率，光子激發釋氣率(η)是藉由通量法(throughput method)進行量測，系統中安裝殘留氣體分析儀來分析真空腔中釋氣的氣體種類。經過數次活化及曝光之後，NEG鍍膜鋁合金真空腔內的最低氣壓約為4×10^(-11)Torr，初始曝光時的光子激發釋氣率為2×10^(-5)分子／光子，較未鍍NEG膜的鋁合金真空腔低約一個數量級，曝光劑量累積至20安培小時(Ah)以上光子激發釋氣率可降至1×10^(-7)分子／光子；系統中主要的殘留氣體為氫氣其次是甲烷，其釋氣一般來自於周邊系統，但實驗中發現部分甲烷是由NEG膜表面產生，另外在活化過程及其後也發現NEG鍍膜製程中的濺鍍氣體－氪的熱釋氣。
關鍵字
無資料並列摘要
The vacuum chamber with non-evaporable getter (NEG) film coating provides clean surface and large pumping speed after activation at high temperature in situ baking. Activation processes of NEG coated aluminum chambers (Ti-30%, Zr-30%, V-40%) have been made by baking the chamber at either 180℃ for 24h or 200℃ for 2h. The photon exposure tests are performed at the 19B1 white light beam line of 1.5GeV Taiwan Light Source to inspect the outgassing rate inside the chamber. The yield of photon stimulated desorption (η) was measured by the throughput method. A residual gas analyzer has been installed for measuring the species of gas. After activation and photon exposure for several times, the ultimate pressure of NEG coated aluminum chamber is about 4×10^(-11)Torr. The initial photon stimulated desorption rate of 2×10^(-5) molecules/photon was obtained which is about one order of magnitude lower than non-coated aluminum alloy chamber. The yield of photon stimulated desorption can reach about 1×10^(-7) molecules/photon when beam dose was more than 20Ah. The residual gases in the system are mostly the hydrogen molecules rather than methane or others. It mainly came from experimental system. However, it is found that part of methane was generated from chemical reaction at NEG film surface. The thermal outgassing of Kr had been found during activation and pressure build-up process as well.