摘要
本研究進行平板電極與感應耦合式電漿輔助原子層沉積系統(PEALD)之設計與製作，並以前驅物(MeCpPtMe3)及還原劑（氧電漿）依序反應，成長金屬白金顆粒。使用即時石英監控器、場發射掃描式與穿透式電子顯微鏡及能量分散光譜儀進行分析相關材料特性。研究結果顯示藉由精密快速的壓力控制(0.05-0.5Tor)，系統可進行穩定的電漿製程；ICPPEALD系統可於300℃還原反應成長均勻粒徑之觸媒白金顆粒於Si基板上，其成長速率約為0.40±0.05Å/cycle，200cycle之平均粒徑尺寸約為5nm。
關鍵字
無資料並列摘要
The parallel-plate and inductive coupling plasma enhanced atomic layer deposition (PEALD) systems designed for high aspect ratio coating were developed. Metal platinum nanoparticles were deposited by PEALD from the combination of MeCpPtMe3 precursor and O2 plasma. The corresponding properties of the growth material were investigated by in-situ quartz monitoring, FESEM/TEM and EDS. It was found that the stable plasma operation could be performed by means of preciously rapid pressure control (0.05-0.5 Torr) in the process. Furthermore, uniform platinum nanoparticles functioned as a catalyst were growth on silicon substrate at 300 ℃ by ICP-PEALD. The growth rate of platinum is around 0.40±0.05 Å/cycle by a plasma reduction reaction. The average particle size is about 5 nm in diameter during the 200 cycle growth cycles.