- 期刊
利用氧電漿處理調變氧化鋅奈米結構缺陷之研究
Study on Defect Modulations of ZnO Nanowires Using Oxygen Plasma Treatments
摘要
本實驗以高溫爐管成長的氧化鋅奈米線為例，TEM 和XRD 的分析可知道氧化鋅奈米線為wurtzite 單晶結構，而X 光光電子能譜儀(XPS) 的分析得知成長的奈米線含有高密度氧缺陷。我們把氧化鋅奈米線以電子束微影的方式製作成奈米元件，在氧電漿處理之後發現元件電流降低，我們透過低頻雜訊量測的分析可推得處理前和氧電漿處理10 s、20 s 和30 s 的氧化鋅奈米線的缺陷密度分別為3.6×10^(21) cm^(-3) eV^(-1)、2.85×10^(21) cm^(-3) eV^(-1)、1.36×10^(21) cm^(-3) eV^(-1) 和1.09×10^(20) cm^(-3) eV^(-1)。
並列摘要
ZnO nanostructures have been demonstrated to possess the excellent performances for diverse applications. However, defects in ZnO may lead to the poor performances during the operation. In present study, we implemented the modification of defect states of ZnO using oxygen plasma treatments. The ZnO nanowires grown by vapor-liquid-solid (VLS) method in vacuum furnace were possessed the large amount of oxygen defects, which is confirmed by the X-ray Photoelectron Spectroscopy (XPS) result. After the oxygen plasma treatments, the defects varied accordingly. The magnitude of current was decreased as the treatment time increased. Moreover, the degree of the defect density at dielectric/nanowire interface was investigated by using the low-frequency noise analysis, revealing that the defect density were 3.6×10^(21) cm^(-3) eV^(-1)、2.85×10^(21) cm^(-3) eV^(-1)、1.36×10^(21) cm^(-3) eV^(-1) and 1.09×10^(20) cm^(-3) eV^(-1) for as-grown, 10 s, 20 s and 30 s oxygen plasma-treated ZnO nanowires.