二維材料過渡金屬硫化物元件製程及其積層三維整合技術

2D Device Fabrication and Technique on Monolithic 3D Integration of 2D Transition Metal Dichalcogenides

藍彥文(Yann-Wen Lan) ； 張文豪(Wen-Hao Chang) ； 楊弘偉(Tilo H. Yang)

《科儀新知》 233期 (2022/12) Pp. 19-24

摘要

有別於傳統矽基電晶體為主的半導體產業應用，原子層厚度的二維半導體材料為主的發展也越來越被重視。但由於此技術的發展深深地被材料與金屬電極介面所影響，如能有效地克服接觸電阻所造成的電子傳輸問題，如此便能提供產業實現超高功效電子元件的應用。本文介紹本實驗室所發展出的低接觸電阻二維材料過渡金屬硫化物元件和呈現二維材料積層三維整合技術，如此提供了整合二維材料元件與當今成熟的半導體產線可行的製程方向，可望加速二維材料元件的量產以及其三維異質整合元件。

並列摘要

Different from the traditional silicon-based semiconductor industry applications, the development of 2D semiconductor materials with an atomic layer thickness has also been paid more and more attention. However, since the development of this technology is deeply affected by the interface between the material and the metal electrode, it is desirable to solve the contact resistance issue, so as to the industry with the possible application of ultra-high-efficiency electronic components. This article introduces the strategy for 2D electronics with low contact resistance developed by our laboratory and the technique on monolithic 3D integration of the 2D semiconductor transistor. The proposed fabrication process can provide a feasible way to achieve the 3D integration with the existing semiconductor manufacturing process. This process is promising to achieve a large-scale fabrication of 2D material transistors and boost up the further development of monolithic 3D integrated circuits.