X光散射技術(X-ray scattering techniques)涵蓋多種非破壞性(non-destructive)分析方法,被廣泛應用於材料的結構分析以及其物理和化學性質的研究。常見技術包括:X光繞射(X-ray diffraction, XRD)、小角與廣角X光散射(small-/wide-angle X-ray scattering, SAXS/WAXS)、X光反射率(X-ray reflectivity, XRR)、X光拉曼散射(X-ray Raman scattering, XRS)、康普頓散射(Compton scattering),以及共振與非共振非彈性X光散射(resonant/Non-resonant inelastic X-ray Scattering, RIXS/NRIXS)等。根據散射過程中的能量轉移特性,這些技術可大致分為彈性散射(elastic scattering)和非彈性散射(inelastic scattering)。本文將重點討論X光彈性散射技術在半導體檢測中的應用,這些技術主要針對材料的微結構分析,為半導體製程中的奈米尺度結構表徵提供關鍵資訊。
X-ray scattering techniques encompass a variety of non-destructive analytical methods that are widely applied in the structural analysis of materials as well as the study of their physical and chemical properties. Commonly used techniques include X-ray diffraction (XRD), small- and wide-angle X-ray scattering (SAXS/WAXS), X-ray reflectivity (XRR), X-ray Raman scattering (XRS), Compton scattering, and resonant/non-resonant inelastic X-ray scattering (RIXS/NRIXS). Based on the energy transfer characteristics during the scattering process, these techniques can be broadly classified into elastic scattering and inelastic scattering. This article focuses on the application of elastic X-ray scattering techniques in semiconductor testing, primarily targeting the microstructural analysis of materials. These techniques provide crucial information for characterizing nanoscale structures, which is vital for semiconductor manufacturing processes.