X光散射技術之半導體檢測應用

X-ray Scattering Techniques for Semiconductor Analysis and Applications

林智敏(Jhih-Min Lin) ； 翁世璋(Shih-Chang Weng)

《科儀新知》 242期 (2025/03) Pp. 37-49

摘要

X光散射技術（X-ray scattering techniques）涵蓋多種非破壞性（non-destructive）分析方法，被廣泛應用於材料的結構分析以及其物理和化學性質的研究。常見技術包括：X光繞射（X-ray diffraction, XRD）、小角與廣角X光散射（small-/wide-angle X-ray scattering, SAXS/WAXS）、X光反射率（X-ray reflectivity, XRR）、X光拉曼散射（X-ray Raman scattering, XRS）、康普頓散射（Compton scattering），以及共振與非共振非彈性X光散射（resonant/Non-resonant inelastic X-ray Scattering, RIXS/NRIXS）等。根據散射過程中的能量轉移特性，這些技術可大致分為彈性散射（elastic scattering）和非彈性散射（inelastic scattering）。本文將重點討論X光彈性散射技術在半導體檢測中的應用，這些技術主要針對材料的微結構分析，為半導體製程中的奈米尺度結構表徵提供關鍵資訊。

並列摘要

X-ray scattering techniques encompass a variety of non-destructive analytical methods that are widely applied in the structural analysis of materials as well as the study of their physical and chemical properties. Commonly used techniques include X-ray diffraction (XRD), small- and wide-angle X-ray scattering (SAXS/WAXS), X-ray reflectivity (XRR), X-ray Raman scattering (XRS), Compton scattering, and resonant/non-resonant inelastic X-ray scattering (RIXS/NRIXS). Based on the energy transfer characteristics during the scattering process, these techniques can be broadly classified into elastic scattering and inelastic scattering. This article focuses on the application of elastic X-ray scattering techniques in semiconductor testing, primarily targeting the microstructural analysis of materials. These techniques provide crucial information for characterizing nanoscale structures, which is vital for semiconductor manufacturing processes.