- 期刊
超高純度N型鍺半導體對人體肌力及肌耐力之影響
The Effect of Ultrapure N-type Ge Semiconductor on Muscle Strength and Endurance in Human
摘要
The purpose of this study were to investigate the effect of ultrapure N-type Germanium (Ge) semiconductor on muscle strength and endurance in human, and to confirm whether the muscle reflex point (MRP) of human exists or not. Fourteen healthy male college students participated in the study. Biodex system Ⅲ dynamometer was used to evaluate the muscle strength and endurance of hamstring and quadriceps. The velocities/repetitions were set at 60°/s×3 times and 300°/s×30 times. Each subject was taped with fake Ge to MRP of hamstring and quadriceps. The same test was administed after one day. The true Ge was used 3 days later, and same test was performed. The paired t-test was used to analyze the data (including the peak torque, average peak torque, average power and total work of muscle strength and endurance). The findings are as follows: 1. Besides peak torque values of quadriceps of dominant leg, true Ge induced significantly higher 60°/s isokinetic parameters than fake Ge and baseline. Peak torque values of both hamstrings were significantly different (p＜.05); average peak torque values of hamstring of non-dominant leg were significantly different (p＜.05); total work values of both hamstrings and quadriceps of non-dominant leg were significantly different (p＜.05~p＜.01); average power values of hamstring of non-dominant leg were significantly different (p＜.05). 2. No matter dominant or non-dominant leg, true Ge induced significantly higher 300°/s isokinetic parameters than false Ge and baseline. Peak torque, average peak torque and total work values were all significantly different (p＜.05~p＜.01); total work values of hamstrings of both and quadriceps of non-dominant leg were significantly different (p＜.05~p＜.01). The conclusion of this study was that MRP of human really exits, and attachment of ultrapure N-type Ge semiconductor to MRP can effectively enhance muscle strength and endurance in human. Especially very effectual to muscle endurance.
並列摘要
The purpose of this study were to investigate the effect of ultrapure N-type Germanium (Ge) semiconductor on muscle strength and endurance in human, and to confirm whether the muscle reflex point (MRP) of human exists or not. Fourteen healthy male college students participated in the study. Biodex system Ⅲ dynamometer was used to evaluate the muscle strength and endurance of hamstring and quadriceps. The velocities/repetitions were set at 60°/s×3 times and 300°/s×30 times. Each subject was taped with fake Ge to MRP of hamstring and quadriceps. The same test was administed after one day. The true Ge was used 3 days later, and same test was performed. The paired t-test was used to analyze the data (including the peak torque, average peak torque, average power and total work of muscle strength and endurance). The findings are as follows: 1. Besides peak torque values of quadriceps of dominant leg, true Ge induced significantly higher 60°/s isokinetic parameters than fake Ge and baseline. Peak torque values of both hamstrings were significantly different (p＜.05); average peak torque values of hamstring of non-dominant leg were significantly different (p＜.05); total work values of both hamstrings and quadriceps of non-dominant leg were significantly different (p＜.05~p＜.01); average power values of hamstring of non-dominant leg were significantly different (p＜.05). 2. No matter dominant or non-dominant leg, true Ge induced significantly higher 300°/s isokinetic parameters than false Ge and baseline. Peak torque, average peak torque and total work values were all significantly different (p＜.05~p＜.01); total work values of hamstrings of both and quadriceps of non-dominant leg were significantly different (p＜.05~p＜.01). The conclusion of this study was that MRP of human really exits, and attachment of ultrapure N-type Ge semiconductor to MRP can effectively enhance muscle strength and endurance in human. Especially very effectual to muscle endurance.