- 期刊
石墨烯奈米帶的近期發展與應用
Application and Prospect of Graphene Nanoribbon
摘要
石墨烯自發現以來因其優異的材料性質而獲得各領域的關注，在電子元件的應用上，石墨烯在高頻元件(Radio Frequency Transistor)上獲得良好的應用，然而石墨烯本質材料在缺乏能隙的情況下，無法製作高速之邏輯電晶體元件(Logic Device)，這將限制其在積體電路之發展。而石墨烯奈米帶結構(Graphene Nanoribbon, GNR)因為尺寸微縮產生的量子局限效應(Quantum Con_nement E_ect)，得以打開並調控能隙(0.2~1.0 eV)，有利於元件應用。然而，製作奈米帶結構的過程，亦會造成邊界(Graphene Edge)的規則性排列受到破壞，使其載子遷移率(Carrier Mobility)劣化。本篇回顧近年來合成石墨烯奈米帶的重要方法與電傳輸特性，以及直接合成邊界可控性的石墨烯奈米帶之近期技術。
並列摘要
Since the discovery of graphene, the outstanding material properties have attracted attentions in versatile applications, especially in frontier nanoelectronics. Although the graphene-based radio-frequency transistor(RF transistor) have been reported to achieve outstanding device performance, the intrinsic graphenelack of bandgap, which hinders its usage in high-speed logic device and limitsthe particle application in integrated circuit.Due to the scale-down induced quantum con_nement e_ect,the graphenenano-ribbon(GNR) have been demonstratedto be a promising route to opengraphene bandgap, where thebandgap value was tunable(0.2~1.0 eV) depending onitsribbon width. Unfortunately, the fabricated GNR usually su_er from disordered edges during the procedures, which in turn results in a dramatically degraded carrier mobility. In this report, the recent progress on the synthesis and electrical transport properties of GNR were reviewed, especially the recent works on synthesis of edge-controllable GNR.