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簡介四族半導體的穿隧效應與穿隧電晶體

A Brief introduction to Band-to-band Tunneling in Group-IV Semiconductor Materials and Tunnel FETs

摘要


量子穿隧場效電晶體理論上能克服傳統金氧半場效電晶體在常溫下所面臨的次臨界斜率的限制。在理想的電路中,量子穿隧場效電晶體具有較低的次臨界電壓,因而操作電壓較小,進而能夠降低功率消耗。實際上該元件目前面臨最主要的挑戰之一為相較傳統金氧半場效電晶體還要小的操作電流,其主要原因來自於在間接能隙半導體材料中(如:矽)需要聲子協助電子以量子穿隧傳遞。為了得到更好的穿隧機率,在此討論以四族為主的穿隧場效電晶體及利用半古典Kane模型了解直接與間接能隙對元件特性的影響。。

並列摘要


Tunnel field-effect transistors have the potential to overcome the subthreshold slope limit of the conventional metal-oxide-semiconductor field effect transistors at room temperature. They allow to further scale down the supply voltage, threshold voltage and power consumption of the integrated circuits. The one of the main challenges of group - I V - based TFETs is the unsatisfactoryon-current due to the phonon - assisted tunneling through the large indirect bandgaps. This article is devoted to discuss the direct and indirect band-to-band tunneling in group-IV semiconductors.

並列關鍵字

MOSFET CMOS Tunnel FET Subthreshold Slope SS

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